C67078-A1401-A2 Просмотр технического описания (PDF) - Siemens AG

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производитель

C67078-A1401-A2

SIPMOS® Power Transistor

Siemens AG 

Typ. drain-source on-resistance

RDS (on) = f (ID)

parameter: VGS

BUZ 205

Drain-source on-resistance

RDS (on) = f (Tj)

parameter: ID = 4.0 A, VGS = 10 V, (spread)

Typ. forward transconductance

gfs = f (ID)

parameter: tp = 80 µs

Gate threshold voltage

VGS (th) = f (Tj)

parameter: VGS = VDS , ID = 1 mA, (spread)

Semiconductor Group

512

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