C67078-A1401-A2 Просмотр технического описания (PDF) - Siemens AG
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C67078-A1401-A2 Datasheet PDF : 6 Pages
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SIPMOS® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
VDS
400 V
ID
6.0 A
RDS (on)
1.0 Ω
Package 1)
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, TC = 35 ˚C
Pulsed drain current, TC = 25 ˚C
Drain-source voltage
Drain-gate voltage, RGS = 20 kΩ
Gate-source voltage
Power dissipation, TC = 25 ˚C
Operating and storage temperature range
Symbol
ID
ID puls
VDS
VDGR
VGS
Ptot
Tj , Tstg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Rth JC
Ordering Code
C67078-A1401-A2
Values
Unit
6.0
A
24
400
V
400
± 20
75
W
– 55 ... + 150
˚C
≤ 1.67
K/W
E
–
55/150/56
1) See chapter Package Outlines.
Semiconductor Group
508
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