AS7C4096-12JI Просмотр технического описания (PDF) - Alliance Semiconductor
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AS7C4096-12JI Datasheet PDF : 9 Pages
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AS7C4096
AS7C34096
®
Functional description
The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices
organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple
interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank
memory systems.
When CE is high the device enters standby mode. The AS7C4096/AS7C34096 is guaranteed not to exceed 110/72 mW power
consumption in CMOS standby mode.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1–I/O8 is
written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/
O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from either a single 5V(AS7C4096) or 3.3V(AS7C34096)
supply. Both devices are available in the JEDEC standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.
Absolute maximum ratings
Parameter
Device
Symbol
Min
Max
Unit
Voltage on VCC relative to GND
AS7C4096
Vt1
AS7C34096
Vt1
–1
–0.5
+7.0
V
+5.0
V
Voltage on any pin relative to GND
Vt2
–0.5
VCC +0.5
V
Power dissipation
PD
–
1.0
W
Storage temperature
Tstg
–65
+150
°C
Temperature with VCC applied
Tbias
–55
+125
°C
DC current unto output (low)
IOUT
–
20
mA
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE
WE
OE
H
X
X
L
H
H
L
H
L
L
L
X
Key: X = Don’t care, L = Low, H = High
Data
High Z
High Z
DOUT
DIN
Mode
Standby (ISB, ISB1)
Output disable (ICC)
Read (ICC)
Write (ICC)
1/13/05; v.1.9
Alliance Semiconductor
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