AS4LC8M8S0 Просмотр технического описания (PDF) - Alliance Semiconductor

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Компоненты Описание

производитель

AS4LC8M8S0

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Alliance Semiconductor 

AS4LC4M16S0

AS4LC16M4S0

®

Recommended operating conditions

Parameter

Symbol

Supply voltage

VCC,VCCQ

GND

Input voltage

VIH

VIL

Output voltage‡

VOH

VOL

Input leakage current

Any input 0V ≤ VIN ≤ VCC

IL

Output leakage current

DQs are disabled

IOZ

0V ≤ VOUT ≤ VCCQ

Ambient operating temperature

TA

† VIL min = –1.5V for pulse widths less than 5 ns.

‡ IOH = –2mA, and IOL = 2mA.

Recommended operating conditions apply throughout this document unless otherwise specified.

Min

3.0

0.0

2.0

–0.3†

2.4

–

–5

–5

0

Max

Unit

3.6

V

0.0

V

VCC + 0.3

V

0.8

V

–

V

0.4

V

+5

uA

+5

uA

70

°C

Absolute maximum ratings

Parameter

Symbol

Min

Max

Unit

Input voltage

Power supply voltage

Storage temperature (plastic)

Power dissipation

Short circuit output current

VIN,VOUT

–1.0

VCC,VCCQ

–1.0

TSTG

–55

PD

–

IOUT

–

+4.6

V

+4.6

V

+150

°C

1

W

50

mA

Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect reliability.

Capacitance

Parameter

Symbol

Min

Max

Input capacitance: CLK

Ci1

2.5

4

Input capacitance: All other input-only

pins

Ci2

2.5

5

Input/output capacitance

CI/O

4.0

6.5

Notes

1 This parameter is sampled. VCC = VCCQ = 3.3V; f = 1MHz; TA = 23° C; pin under test biased at 1.4V.

2 Max value is specified for –10, –10F, and –8.

3 For –75 part, Max = 3.5 pF.

4 For –75 part, Max = 3.8 pF.

5 For –75 part, Max = 6.0 pF.

Unit

Notes

pF

1, 2, 3

pF

1, 2, 4

pF

1, 2, 5

6

ALLIANCE SEMICONDUCTOR

7/5/00

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