BUL42D Просмотр технического описания (PDF) - ON Semiconductor
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BUL42D Datasheet PDF : 12 Pages
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10
5 ms
1 ms
dc
1
BUL42D
MAXIMUM RATINGS
5
10 ms 1 ms
4
3
TJ = 125°C
GAIN ≥ 4
LC = 500 mH
0.1
0.01
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 28. Forward Bias Safe Operating Area
2
1
VBE(off) = -5 V
0
VBE = 0 V VBE(off) = -1.5 V
300
400
500
600
700
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 29. Reverse Bias Safe Operating Area
1
0.8
SECOND BREAKDOWN
DERATING
0.6
0.4
0.2
THERMAL DERATING
0
20 40
60
80
100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 30. Power Derating
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