BUL42D Просмотр технического описания (PDF) - ON Semiconductor
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BUL42D Datasheet PDF : 12 Pages
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BUL42D
TYPICAL SWITCHING CHARACTERISTICS
3
IBon = IBoff
VCC = 15 V
2.5
VZ = 300 V
LC = 200 µH
2
1.5
IB 1 & 2 = 200 mA
50 mA
500 mA
100 mA
1
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 23. Inductive Storage Time, tsi
440
420
400
380
360
340
320
300
0
di/dt = 10 A/ms, TC = 25°C
0.5
1
1.5
2
IF, FORWARD CURRENT (AMPS)
Figure 24. Forward Recovery Time, tfr
VCE
Dyn 1 ms
Dyn 3 ms
0V
90% IB
1 ms
IB
3 ms
TIME
Figure 25. Dynamic Saturation Voltage
Measurements
10
IC
8
6
Vclamp
4
IB
2
90% IC
tsi
tfi
10% Vclamp
10% IC
tc
90% IB1
0
0
2
4
6
8
TIME
Figure 26. Inductive Switching Measurements
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7
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