BUL42D Просмотр технического описания (PDF) - ON Semiconductor
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BUL42D Datasheet PDF : 12 Pages
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1000
100
10
1
1
BUL42D
TYPICAL SWITCHING CHARACTERISTICS
900
Cib
TJ = 25°C
f(test) = 1 MHz
800
700
ICER = 10 mA
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
Cob
100
600
500
400
TC = 25°C
300
10
ICER = 100 mA
lC = 25 mH
100
1000
RBE (W)
Figure 12. BVCER = f(RBE)
10000
800
700
600
500
400
300
200
100
0
0
hFE = 5
hFE = 10
IBon = IBoff
VCC = 300 V
PW = 40 µs
TJ = 125°C
TJ = 25°C
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, ton
9
IBon = IBoff
VCC = 300 V
PW = 40 µs
6
hFE = 5
3
TJ = 125°C
TJ = 25°C
hFE = 10
0
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 14. Resistive Switching, toff
4
IBon = IBoff
VCE = 15 V
3 VZ = 300 V
LC = 200 µH
2
1
4
TJ = 125°C
3
TJ = 25°C
2
TJ = 125°C
TJ = 25°C
IBon = IBoff
VCE = 15 V
VZ = 300 V
LC = 200 µH
0
0
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time,
tsi @ hFE = 5
1
0.5
1
1.5
2
IC, COLLECTOR CURRENT (AMPS)
Figure 16. Inductive Storage Time,
tsi @ hFE = 10
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