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Номер в каталоге
Компоненты Описание
BUH50G Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BUH50G
SWITCHMODE™ NPN Silicon Planar Power Transistor
ON Semiconductor
BUH50G Datasheet PDF : 8 Pages
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BUH50G
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1
m
F
150
W
100
W
MTP8P10
3W
3W
100
m
F
+10 V
MPF930
MPF930
MTP8P10
MUR105
R
B1
I
out
A
V
CE
I
B1
I
B
50
W
COMMON
500
m
F
-V
off
MJE210
R
B2
150
W
3W
MTP12N10
1
m
F
V
(BR)CEO(sus)
L = 10 mH
R
B2
=
∞
V
CC
= 20 Volts
I
C(pk)
= 100 mA
V
CE
PEAK
I
C
PEAK
I
B2
Inductive Switching
L = 200
m
H
R
B2
= 0
V
CC
= 15 Volts
R
B1
selected for
desired I
B1
RBSOA
L = 500
m
H
R
B2
= 0
V
CC
= 15 Volts
R
B1
selected for
desired I
B1
1
0.5
0.2
0.1
0.1
0.05
0.02
SINGLE PULSE
0.01
0.01
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 2.5
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
0.1
1
10
100
1000
t, TIME (ms)
Figure 22. Typical Thermal Response (Z
q
JC
(t)) for BUH50
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