BUH50G Просмотр технического описания (PDF) - ON Semiconductor
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BUH50G Datasheet PDF : 8 Pages
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BUH50G
TYPICAL CHARACTERISTICS
250
tc
TJ = 125°C
TJ = 25°C
200
150
100
IBoff = IC/2
50 VCC = 15 V
VZ = 300 V
tfi
0 LC = 200 mH
1
2
3
4
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
4000
3000
2000
1000
0
3
TJ = 125°C
TJ = 25°C
IC = 1 A
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 2 A
4
5
6
7
8
9
10
hFE, FORCED GAIN
Figure 14. Inductive Storage Time
150
140
130
120
110
100
90
80
70
60
50
2
IC = 1 A
350
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
250
IC = 1 A
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
IC = 2 A
4
6
8
hFE, FORCED GAIN
Figure 15. Inductive Fall Time
150
IC = 2 A
TJ = 125°C
TJ = 25°C
50
10
3
5
7
9
11
hFE, FORCED GAIN
Figure 16. Inductive Crossover Time
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL DERATING
0.4
0.2
0
20 40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Power Derating
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