BUH100 Просмотр технического описания (PDF) - ON Semiconductor
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BUH100 Datasheet PDF : 12 Pages
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BUH100
TYPICAL SWITCHING CHARACTERISTICS
4
200
IC = 7.5 A
3
IC = 5 A
150
2
100
IC = 7.5 A
1
TJ = 125°C
TJ = 25°C
0
2
4
6
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
8
10
hFE, FORCED GAIN
Figure 16. Inductive Storage Time
IBoff = IB2
50 VCC = 15 V
VZ = 300 V
LC = 200 µH
0
3
4
5
IC = 5 A
6
7
8
hFE, FORCED GAIN
TJ = 125°C
TJ = 25°C
9
10
Figure 17. Inductive Fall Time
800
IB1 = IB2
700 VCC = 15 V
VZ = 300 V
600 LC = 200 µH
500
IC = 7.5 A
400
300
200
TJ = 125°C
IC = 5 A
TJ = 25°C
100
3
4
5
6
7
8
9
10
hFE, FORCED GAIN
Figure 18. Inductive Crossover Time, tc
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