BU932RPFI Просмотр технического описания (PDF) - Inchange Semiconductor

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BU932RPFI

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU932RPFI

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH

450

V

VCE(sat)

Collector-Emitter Saturation Voltage IC= 8 A; IB= 150mA

VBE(sat)

Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 8 A; IB= 150mA

VCE= 500V;VBE= 0

VCE= 500V;VBE= 0;Tj= 125℃

VCE= 450V;IB= 0

1.8

V

2.2

V

1.0

5.0

mA

1.0 mA

IEBO

hFE

VECF

www.iscsemi.cn Emitter Cutoff Current

VEB= 5V; IC= 0

DC Current Gain

IC= 5A; VCE= 10V

300

C-E Diode Forward Voltage

IF= 10A

50

mA

2.8

V

isc Website：www.iscsemi.cn

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