BU931RPFI Просмотр технического описания (PDF) - Inchange Semiconductor

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BU931RPFI

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU931RPFI

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 10mH

400

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB=B 70mA

V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA

V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB=B 250mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 8 A; IB= 100mA

V BE(sat)-2 Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 10A; IB= 250mA

VCE= 450V;VBE= 0

VCE= 450V;VBE= 0;Tj= 125℃

VCE= 400V;IB= 0

1.6

V

1.8

V

1.8

V

2.2

V

2.2

V

1.0

5.0

mA

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

50

mA

hFE

DC Current Gain

IC= 5A; VCE= 10V

300

VECF

C-E Diode Forward Voltage

IF= 10A

2.8

V

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