BU941ZPFI(2005) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

BU941ZPFI
(Rev.:2005)

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS

STMicroelectronics 

BU941ZP BU941ZPFI

Table 2: Absolute Maximum Ratings

Symbol

Parameter

VCEO

VEBO

IC

ICM

IB

IBM

Ptot

Visol

Tstg

TJ

Collector-Emitter Voltage (IB= 0)

Emitter-Base Voltage (IC= 0)

Collector Current

Collector Peak Current (tp < 5ms)

Base Current

Base Peak Current (tp < 5 ms)

Total Dissipation at TC = 25 oC

Insulation Withstand Voltage (RMS) from All Three Leads to

External Heatsink

Storage Temperature

Max. Operating Junction Temperature

Value

Unit

BU941ZP

BU941ZPFI Unit

350

V

5

V

15

A

30

A

1

A

5

A

155

65

W

2500

V

-65 to 175

-65 to 175

°C

175

175

°C

Table 3: Thermal Data

Rthj-case Thermal Resistance Junction-Case

Max

TO-218

0.97

ISOWATT218

2.3

Unit

oC/W

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ.

ICEO

IEBO

VCL*

Collector Cut-off Current

(IB = 0)

Emitter Cut-off Current

(IC = 0 )

Clamping Voltage

VCE = 300 V

VCE = 300 V

VEB = 5 V

IC = 100 mA

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 8 A

IC = 10 A

VBE(sat)* Base-Emitter

Saturation Voltage

IC = 12 A

IC = 8 A

IC = 10 A

hFE* DC Current Gain

IC = 12 A

IC = 5 A

Functional Test

VCC = 24 V

(see fig. 12)

INDUCTIVE LOAD

ts Storage Time

tf Fall Time

VCC = 12 V

VBE(off) = 0 V

VClamp = 300 V

IB = 70 mA

VF Diode Forward Voltage

IF = 10 V

* Pulsed: Pulsed duration = 300 µs, duty cycle ≤ 1.5 %.

Tj = 125 oC

IB =100 mA

IB = 250 mA

IB = 300 mA

IB =100 mA

IB = 250 mA

IB = 300 mA

VCE = 10 V

L = 7 mH

L = 7 mH

RBE =47 W

IC = 7 A

(see fig. 14)

350

300

10

15

0.5

Max.

100

0.5

20

500

1.8

1.8

2

2.2

2.5

2.7

2.5

Unit

µA

mA

mA

V

V

V

V

V

V

V

A

µs

µs

V

2/9

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