AS4LC1M16S0 Просмотр технического описания (PDF) - Alliance Semiconductor
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AS4LC1M16S0 Datasheet PDF : 29 Pages
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Mode register fields
Address
Function
† RFU = 0 during MRS cycle.
Write burst length
A9
Length
Programmed
0 burst length
1 Single burst
AS4LC2M8S1
AS4LC1M16S1
®
Register programmed with MRS
A11~A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
RFU† WBL
TM
CAS latency
BT
Burst length
Burst type
A3
Type
0
Sequential
1
Interleaved
Test mode
A8 A7
Type
0 0 Mode register set
01
Reserved
10
Reserved
11
Reserved
CAS latency
A6 A5 A4 Latency
00
0 Reserved
00
1
1
01
0
2
01
1
3
1X
X Reserved
Burst sequence (burst length = 4)
Initial address
A1
A0
0
0
0
0
1
1
1
0
2
1
1
3
Burst sequence (burst length = 8)
Initial address
A2
A1
A0
0
0
0
01
0
0
1
12
0
1
0
23
0
1
1
34
1
0
0
45
1
0
1
56
1
1
0
67
1
1
1
70
A2
0
0
0
0
1
1
1
1
Sequential
1
2
3
2
3
0
3
0
1
0
1
2
Sequential
234567
345670
456701
567012
670123
701234
012345
123456
Burst length
A1
A0
BT = 0 BT = 1
0
0
1
1
0
1
2
2
1
0
4
4
1
1
8
8
0
0
Reserved Reserved
0
1
Reserved Reserved
1
0
Reserved Reserved
1
1
Full page Reserved
Interleave
0
1
2
3
1
0
3
2
2
3
0
1
3
2
1
0
Interleave
01234567
10325476
23016745
32107654
45670123
54761032
67452301
76543210
5/21/01; v.1.1
Alliance Semiconductor
P. 5 of 29
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