BU28TA2WHFV Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BU28TA2WHFV

1ch 200mA CMOS LDO Regulators

ROHM Semiconductor 

BUTA2WNVX series, BUTA2WHFV series

Technical Note

●Electrical characteristics

(Unless otherwise specified Ta=25℃, VIN=VOUT+1.0 V (VIN=3.5 V on VOUT=1.8-V and1.5-V products),

STBY=1.5 V, CIN=1.0 µF, CO=1.0 µF)

Parameter

Limits

Symbol

Unit

Min.

Typ.

Max.

Conditions

Output voltage

VOUT

×0.99

VOUT

×1.01

V IOUT=10 μA, VOUT≥2.5 V

VOUT

VOUT

VOUT

-25 mV

VOUT

+25 mV

IOUT=10 μA, VOUT<2.5 V

Circuit current

IIN

-

40

95

μA IOUT=0mA

Circuit current (at STBY)

ISTBY

-

-

1

μA STBY=0 V

Ripple rejection

RR

55

-

-

Input/Output voltage difference VSAT

-

-

Line regulation

VDL

-

70

VRR=-20 dBv, fRR=1 kHz,

IOUT=10 mA, 1.5 V≤VOUT≤1.8 V

-

dB

65

VRR=-20 dBv,fRR=1 kHz,

IOUT=10 mA, 2.5 V≤VOUT

400

800

mV

2.5 V≤VOUT≤2.6 V

(VIN=0.98*VOUT, IOUT=200 mA)

360

720

mV

2.7 V≤VOUT≤2.85 V

(VIN=0.98*VOUT, IOUT=200 mA)

330

660

mV

2.9 V≤VOUT≤3.1 V

(VIN=0.98*VOUT,IOUT=200 mA)

300

600

mV

3.2 V≤VOUT≤3.4 V

(VIN=0.98*VOUT, IOUT=200 mA)

2

20

mV

VIN=VOUT+1.0 V to 5.5 V,

IOUT=10 μA

Load regulation

VDLO

-

10

80

mV IOUT=0.01 mA to 100 mA

Overcurrent protection detection

current

ILMAX

250

400

700

mA Vo=VOUT*0.8

Output short-circuit current

ISHORT 20

70

150

mA Vo=0 V

Output discharge resistance

RDSC 20

40

80

Ω VIN=4.0 V, STBY=0 V

Standby pull-down resistance RSTB 500

1000 2000

kΩ

Standby control

ON

OFF

VSTBH 1.5

-

VSTBL -0.3

-

* This product does not have radiation-proof design.

5.5

V

0.3

V

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© 2011 ROHM Co., Ltd. All rights reserved.

3/29

2011.01 - Rev.C

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