BU28TA2WNVX(2009) Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

BU28TA2WNVX
(Rev.:2009)

High-speed Load Response FULL CMOS LDO Regulators

ROHM Semiconductor 

BUTA2WNVX Series, BUTA2WHFV Series

Technical Note

●Electrical characteristics(Ta=25C, VIN=VOUT+1.0 V (VIN=3.5 V on VOUT=1.8-V and1.5-V products), STBY=1.5 V, CIN=1.0 F, CO=1.0 F,

unless otherwise specified)

Parameter

Output voltage

Circuit current

Circuit current (at STBY)

Ripple rejection

Symbol

Min.

VOUT×0.99

VOUT

VOUT-25 mV

IIN

-

ISTBY

-

Typ.

VOUT

40

-

70

RR

55

65

-

400

Max.

VOUT×1.01

VOUT+25 mV

95

1

-

800

Unit Conditions

V IOUT=10 μA，VOUT≥2.5 V

IOUT=10 μA，VOUT<2.5 V

μA IOUT=0mA

μA STBY=0 V

VRR=-20 dBv, fRR=1 kHz,

IOUT=10 mA

dB

1.5 V≤VOUT≤1.8 V

VRR=-20 dBv,fRR=1 kHz,

IOUT=10 mA

2.5 V≤VOUT

mV

2.5 V≤VOUT≤2.6 V

(VIN=0.98*VOUT, IOUT=200 mA)

-

Input/Output voltage difference VSAT

-

360

720

mV

2.7 V≤VOUT≤2.85 V

(VIN=0.98*VOUT, IOUT=200 mA)

330

660

mV

2.9 V≤VOUT≤3.1 V

(VIN=0.98*VOUT,IOUT=200 mA)

-

Line regulation

VDL

-

Load regulation

VDLO

-

Overcurrent protection

detection current

ILMAX

250

Output short-circuit current

ISHORT

20

Output discharge resistance

RDSC

20

Standby pull-down resistance RSTB

500

Standby control

ON

VSTBH

1.5

OFF

VSTBL

-0.3

300

2

10

400

70

40

1000

-

-

600

20

80

700

150

80

2000

5.5

0.3

mV

3.2 V≤VOUT≤3.4 V

(VIN=0.98*VOUT, IOUT=200 mA)

mV

VIN=VOUT+1.0 V to 5.5 V,

IOUT=10 μA

mV IOUT=0.01 mA to 100 mA

mA Vo=VOUT*0.8

mA Vo=0 V

Ω VIN=4.0 V, STBY=0 V

kΩ

V

V

* This product does not have radiation-proof design.

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© 2009 ROHM Co., Ltd. All rights reserved.

3/27

2009.05 - Rev.B

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