BU108 Просмотр технического описания (PDF) - Inchange Semiconductor

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BU108

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU108

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 100mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2A

ICEX

Collector Cutoff Current

VCE= 1500V; VBE= -2V

ICBO

Collector Cutoff Current

VCB= 1500V; IE= 0

hFE

DC Current Gain

IC= 1A ; VCE= 5V

tf

Fall Time

IC= 4.5A

MIN MAX UNIT

5

V

5.0

V

1.3

V

1.0 mA

1.0 mA

8

1.2 μs

isc Website：www.iscsemi.cn

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