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BTS630 Просмотр технического описания (PDF) - Siemens AG

Номер в каталоге
Компоненты Описание
производитель
BTS630
Siemens
Siemens AG Siemens
BTS630 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BTS 630
Electrical Characteristics
at Tj = 25 EC, unless otherwise specified.CBootstrap = 22nF
Parameter
Symbol
On-state resistance
IL=3A, Vbb=12V
Operating voltage
Tj = -40 ...+150EC
Nominal current, calculated value
ISO-standard:Vbb-VOUT 0.5V, Tc=85°C
Load current limit
Vbb-VOUT> 1V
Undervoltage shutdown
IL = 3A
Overvoltage shutdown
IL = 3A
Max.output voltage (RMS)
IL = 3A, Vbb > 12 V
Reference voltage
IREF= 10mA
Reference current
pin 18 (GND) to pin 20 (VREF) short
Internal current consumption during
operation, measured in PWM gap
Bootstrap voltage, pin 2 (CB1) to pin 3 (CB2)
Vbb = 12 V,
PWM frequency
Tc = -40 ... +150 °C, Ct = 68 nF
Max. pulse duty factor
IL = 3A, VC=0V , (50% VOUT)
Min. pulse duty factor
IL = 3A, VC=0V , (50% VOUT)
Slew rate "on"
10 ... 90% IOUT
Slew rate "off"
90 ... 10% IOUT
Thermal overload trip temperature
1) Note: undervoltage shutdown
2) Note: overvoltage shutdown
RON
Vbb
IL-ISO
ILLim
Vbb(LOW)
Vbb(HI)
VRMSmax
VREF
IREF
IR
VB
fPWM
Dimax
Dimin
du/dt(on)
du/dt(off)
Tj
Values
Unit
min. typ. max.
-
- 70 m
5.9 1)
16.9 2) V
5.8
-
-A
- 20
-A
3
4.2 5.4 V
17 18 19 V
12
- 14 V
2
3
V
- 150
- mA
-
5
mA
- 10
-V
50
- 100 Hz
95 98
-%
-8
14 %
20
- 120 mV/µs
20
- 120 mV/µs
150
-
- °C
Semiconductor Group
3

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