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BTS426L1 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание
производитель
BTS426L1
Infineon
Infineon Technologies Infineon
BTS426L1 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
BTS426L1
Truth Table
Input- Output Status
level
level
Normal
operation
L
L
H
H
Open load
L
13)
H
H
Short circuit to
L
H
Vbb
H
H
Overtem-
perature
L
L
H
L
Undervoltage
L
L
H
L
Overvoltage
L
L
H
L
425 L1
426 L1
H
H
H (L14))
L
L15)
H (L16))
H
L
H
H
H
H
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Input circuit (ESD protection)
Ibb
3
I IN
IN
Vbb
2
IL
I ST
PROFET
OUT
5
ST
4
V IN VST
GND
V bb
1 IGND
R GND
VON
V OUT
IN
RI
ESD-ZD I
II
GND
ESD zener diodes are not to be used as voltage clamp at DC
conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
13) Power Transistor off, high impedance
14) with external resistor between pin 3 and pin 5
15) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset
voltage at the GND and ST pins will occur and the VST low signal may be errorious.
16) Low resistance to Vbb may be detected in ON-state by the no-load-detection
Semiconductor Group
6
2003-Oct-01

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