BTA208X-800B Просмотр технического описания (PDF) - NXP Semiconductors.

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BTA208X-800B

3Q Hi-Com Triac

NXP Semiconductors. 

BTA208X-800B

3Q Hi-Com Triac

Rev. 03 — 3 February 2011

Product data sheet

1. Product profile

1.1 General description

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic

package intended for use in circuits where high static and dynamic dV/dt and high dI/dt

can occur. This "series B" triac will commutate the full rated RMS current at the maximum

rated junction temperature without the aid of a snubber.

1.2 Features and benefits

 3Q technology for improved noise

immunity

 High commutation capability with

maximum false trigger immunity

 High immunity to false turn-on by dV/dt

 High voltage capability

 Isolated mounting base package

 Planar passivated for voltage

ruggedness and reliability

 Triggering in three quadrants only

1.3 Applications

 Electronic thermostats

 General purpose motor controls

 Rectifier-fed DC inductive loads e.g.

DC motors and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDRM

repetitive peak

off-state voltage

ITSM

IT(RMS)

non-repetitive

peak on-state

current

RMS on-state

current

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; see Figure 4;

see Figure 5

full sine wave; Th ≤ 73 °C;

see Figure 3; see Figure 1;

see Figure 2

Static characteristics

IGT

gate trigger

VD = 12 V; IT = 0.1 A; T2+ G+;

current

Tj = 25 °C; see Figure 7

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; see Figure 7

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; see Figure 7

Min Typ Max Unit

-

-

800 V

-

-

65 A

-

-

8

A

2 18 50 mA

2 21 50 mA

2 34 50 mA

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