BTA2008 Просмотр технического описания (PDF) - NXP Semiconductors.
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BTA2008 Datasheet PDF : 12 Pages
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NXP Semiconductors
103
ITSM
(A)
102
(1)
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
003aac119
IT
ITSM
t
tp
Tj(init) = 25 °C max
10
10-5
10-4
10-3
10-2
10-1
tp (s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
12
I T(RMS)
(A)
10
8
6
4
2
003aac117
1
IT(RMS)
(A)
0.8
0.6
0.4
0.2
003aac115
0
10-2
10-1
1
10
surge duration (s)
Fig 4.
f = 50 Hz
Tlead = 70 °C
RMS on-state current as a function of surge
duration; maximum values
0
-50
0
50
100
150
Tlead (°C)
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BTA2008_SER_D_E_1
Product data sheet
Rev. 01 — 18 January 2008
© NXP B.V. 2008. All rights reserved.
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