BTA225-600BT Просмотр технического описания (PDF) - Philips Electronics
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BTA225-600BT Datasheet PDF : 12 Pages
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Philips Semiconductors
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current VD = 12 V; IT = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
IL
latching current
VD = 12 V; IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
IH
holding current
VD = 12 V; IGT = 0.1 A;
see Figure 11
VT
on-state voltage
IT = 30 A; see Figure 9
VGT
gate trigger voltage VD = 12 V; IT = 0.1 A;
see Figure 7
VD = 400 V; IT = 0.1 A;
Tj = 150 °C
ID
off-state leakage
VD = VDRM(max); Tj = 150 °C
current
Dynamic characteristics
dVD/dt
critical rate of rise of
off-state voltage
VDM = 67 % VDRM(max);
Tj = 150 °C; exponential
waveform; gate open circuit
dIcom/dt
critical rate of change
of commutating
current
VDM = 400 V; Tj = 150 °C;
IT(RMS) = 25 A; without
snubber; gate open circuit;
see Figure 12
tgt
gate controlled
ITM = 30 A; VD = VDRM(max);
turn-on time
IG = 0.1 A; dIG/dt = 5 A/µs
[1] Device does not trigger in the T2−, G+ quadrant.
BTA225-600BT
Three quadrant triacs high commutation
Min
Typ
Max
Unit
[1]
2
18
50
mA
2
21
50
mA
2
34
50
mA
-
31
-
34
-
30
-
31
-
1.3
-
0.7
0.25
0.4
-
1
60
mA
90
mA
60
mA
60
mA
1.55
V
1.5
V
-
V
5
mA
1 000
4 000
-
9
20
-
V/µs
A/ms
-
2
-
µs
9397 750 14379
Product data sheet
Rev. 01 — 3 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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