NXP Semiconductors
BT151-650L
SCR, 12 A, 5 mA, 650 V, SOT78
160
ITSM
(A)
120
003aab829
80
40
0
1
IT
ITSM
tp
t
Tj initial = 25 °C max
10
102
103
number of cycles
Fig 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 6
junction to mounting
base
thermal resistance from
junction to ambient free
air
Min Typ Max Unit
-
-
1.3 K/W
-
60
-
K/W
10
Zth(j-mb)
(K/W)
1
001aaa962
10−1
10−2
P
tp
δ=
T
10−3
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BT151-650L_5
Product data sheet
Rev. 05 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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