BT151-650L Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BT151-650L Datasheet PDF : 11 Pages
| |||
NXP Semiconductors
BT151-650L
SCR, 12 A, 5 mA, 650 V, SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
VRRM
repetitive peak reverse
voltage
IT(AV)
average on-state
current
half sine wave; Tmb ≤ 109 °C; see Figure 3
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 109 °C; see Figure 1; see
Figure 2
dIT/dt
rate of rise of on-state IT = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs
current
IGM
peak gate current
PGM
peak gate power
Tstg
storage temperature
Tj
junction temperature
ITSM
non-repetitive peak
half sine wave; tp = 8.3 ms; Tj(init) = 25 °C
on-state current
half sine wave; tp = 10 ms; Tj(init) = 25 °C; see
Figure 4; see Figure 5
I2t
PG(AV)
VRGM
I2t for fusing
average gate power
peak reverse gate
voltage
tp = 10 ms; sine-wave pulse
over any 20 ms period
Min Max Unit
-
650 V
-
650 V
-
7.5 A
-
12
A
-
50
A/µs
-
2
A
-
5
W
-40 150 °C
-
125 °C
-
132 A
-
120 A
-
72
A2s
-
0.5 W
-
5
V
25
IT(RMS)
(A)
20
15
10
5
001aaa954
16
IT(RMS)
(A)
12
8
4
001aaa999
0
10−2
10−1
1
10
surge duration (s)
Fig 1. RMS on-state current as a function of surge
duration; maximum values
0
−50
0
50
100
150
Tmb (°C)
Fig 2. RMS on-state current as a function of mounting
base temperature; maximum values
BT151-650L_5
Product data sheet
Rev. 05 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
3 of 11
Share Link: 