BT100-8
Electrical Characteristics
Symbol
Items
IDRM
Repetitive Peak Off-
State Current
VTM
Peak On-State
Voltage(1)
IGT
Gate Trigger
Current(2)
VGT
Gate Trigger
Voltage(2)
Non-Trigger Gate
VGD Voltage(1)
Conditions
Ratings
Unit
Min Typ Max
V =V AK DRM, or VRRM:RGK=1000Ω
Tc=25℃ ━
Tc=125℃ ━
━ 10
━ 200
㎂
(ITM=1A, Peak)
━ 1.2 1.7
V
VAK=6V, RL=100Ω
Tc=25℃ ━
Tc=-40℃ ━
━ 200
━ 500
㎂
VD=7V, RL=100Ω
Tc=25℃ ━
Tc=-40℃ ━
━ 0.8
━ 1.2
V
VAK=12V, RL=100Ω Tc=125℃ 0.2 ━ ━
V
dv/dt
Critical Rate of Rise
Off-State Voltage
VD=Rated VDRM,
Exponential wave-form
RGK=1000Ω TJ=125℃
500 800 ━ V/㎲
di/dt
IH
Rth(j-c)
Rth(j-a)
Critical Rate of Rise
Off-State Voltage
ITM=2A ; Ig=10mA
━ ━ 50
Holding Current
Thermal Impedance
Thermal Impedance
VAK=12V, Gate Open
Initiating Current=50mA Tc=25℃ ━
Tc=-40℃ ━
Junction to case
━
Junction to Ambient
━
2 5.0
━ 10
━ 60
━ 150
A/㎲
mA
℃/W
℃/W
※ Notes :
1. Pulse Width ≤1.0ms, Duty cycle ≤1%
2. Does not include RGK in measurement.
2