BSX62 Просмотр технического описания (PDF) - Philips Electronics
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производитель
BSX62 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistors
Product specification
BSX62; BSX63
CHARACTERISTICS
Tcase = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
BSX62
ICBO
collector cut-off current
BSX63
IEBO
emitter cut-off current
hFE
DC current gain
BSX62-10; BSX63-10
VCB = 40 V
VCB = 40 V; Tcase = 150 °C
VCB = 60 V
VCB = 60 V; Tcase = 150 °C
IC = 0; VEB = 5 V
IC = 100 mA; VCE = 1 V
−
−
100 nA
−
−
100 µA
−
−
100 nA
−
−
100 µA
−
−
100 nA
−
110 −
BSX62-16; BSX63-16
−
180 −
hFE
DC current gain
BSX62-10; BSX63-10
IC = 1 A; VCE = 1 V
63 100 160
BSX62-16; BSX63-16
100 160 250
hFE
DC current gain
BSX62-10; BSX63-10
IC = 2 A; VCE = 5 V
−
70 −
BSX62-16; BSX63-16
−
120 −
VCEsat
VBEsat
VBE
Cc
fT
collector-emitter saturation voltage IC = 1 A; IB = 100 mA
−
−
700 mV
IC = 2 A; IB = 200 mA
−
−
800 mV
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2 V
IC = 2 A; IB = 200 mA
−
−
1.3 V
base-emitter voltage
IC = 100 mA; VCE = 1 V
−
−
1
V
IC = 1 A; VCE = 1 V
−
−
1.2 V
IC = 2 A; VCE = 5 V
−
−
1.3 V
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
70 pF
transition frequency
IC = 200 mA; VCE = 10 V; f = 100 MHz 30 70 −
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
toff
turn-off time
ICon = 1 A; IBon = 50 mA; IBoff = −50 mA −
−
300 ns
−
−
1.5 µs
1997 Jun 19
4
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