BSS84LT1 Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

BSS84LT1

Power MOSFET 130 mAmps, 50 Volts

Willas Electronic Corp. 

WILLAS

1.0PA SoUwRFeACrEMMOOUSNTFSECTHOT1T3KY0BmARARImERpRsEC, T5IF0IERVSo-2l0tVs- 200V

SOD-123+ PACKAGE

FM120-M+

BSS84LTT1HRU

FM1200-M+

Pb Free Product

Features

Package outline

• Batch process design, excellentTpYowPeICr dAisLsiEpaLtEioCn TofRfeIrCsAL CHARACTERISTICS

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

optimize9board space.

• Low power lVoGsSs,=h4i.g5hVefficiency.

• High cur8rent capability, low forward voltage drop.

• High surge capability.

150°C

7

6.5 VGS = 10 V

6

0.146(3.7)

0.130(3.3)

150°C

0.012(0.3) Typ.

• Guardrin7g for overvoltage protection.

5.5

• Ultra high-speed switching.

• Silicon e6pitaxial planar chip, metal silicon junction.

5

0.071(1.8)

0.056(1.4)

• Lead-free parts meet environmental standards of

4.5

MIL-STD5-19500 /228

25°C

• RoHS product for packing code suffix "G"

4

25°C

Halogen 4free product for packing code suffix "H"

3.5

Mechanical data

-55°C

3

3

• Epoxy : UL94-V0 rated flame retardant

2.5

0.040(1.0)-55°C

0.024(0.6)

• Case : M2o0lded pla0s.1tic, SOD0.-2123H 0.3

0.4

0.5 , 0.6

• Terminals :Plated terminaIDl,sD, DsAoIlNdeCUraDbDlEeNpTe(Ar MMPISL)-STD-750

Method 2026

Figure 3. On–Resistance versus Drain Current

• Polarity : Indicated by cathode band

2

0 0.031(0.8) Typ. 0.1

0.2

0.3

00.4.031(0.8) Ty0p..5

0.6

ID, DDAIN CUDDENT (AMPS)

Figure 4. On–Resistance versus Drain Current

Dimensions in inches and (millimeters)

• Mounting Position : Any

•

Weight

2

: Approximated

0.011

gram

8

VDS = 40 V

Ratings at 25℃11M..a68mAbXieIMnt UteMmpRerAatTurIeNuGnlSesAs oNthDerEwLisEe CspTeRcVIDifGIieC=Sd0A=..51L20ACV HARACTERIS67 TICTJS= 25°C

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive lo1a.4d, derate current by 20%

5

1.2 RATINGS

SYMBOL

VGS = 4.5 V

FM120ID-M=H0.F1M31A30-MH

FM140-M4H

FM150-MH

FM160-MH

FM180-MH

FM1100-MH

FM1150-MH

FM1200-MH

UNIT

Marking Code

Maximum Recurren1t Peak Reverse Voltage

Maximum RMS Vo0.l8tage

Maximum DC Blocking Voltage

12

13

14 3 15

16

VRRM

20

30

40

50

60

2

VRMS

14

21

28

35

42

VDC

20

30

40 1 50

60

18 ID = 0.5 A10

80

100

56

70

80

100

115 120

150

200 Volts

105

140 Volts

150

200 Volts

Maximum Average0.6F-ā5o5rward Rectifie-d5Current

45

IO

95

0

145

0

5001.0

1000

Amps

1500

2000

Peak Forward Surge Current 8.3 ms sTinJg,lJeUhNaClfTsIiOneN-wTEaMvePEDAIFTSUMDE (°C)

superimposed on rated load (JEDEC method)

Figure 5. On–Resistance Variation with Temperature

Typical Thermal Resistance (Note 2)

RΘJA

Q3T0, TOTAL GATE CHADGE (pC)

Figure 6. Gate Charge

40

Amps

℃/W

Typical Junction Capacitance (Note 1)

CJ

120

PF

Operating Temperature Range

1

TJ

-55 to +125

-55 to +150

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

CHARACTERISTICS

0.1

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

SYMBOTLJ F=M115200°-CMH FM12350°-MCH FM140-M-H55F°MC150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

VF

0.50

0.70

0.85

0.9

0.92 Volts

IR

0.5

mAmps

10

NOTES:

0.01

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.001

0

0.5

1.0

1.5

2.0

2.5

3.0

VSD, DIODE FODWAD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

2012-06

2012-10

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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