BSS84LT1 Просмотр технического описания (PDF) - Willas Electronic Corp.

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Компоненты Описание

производитель

BSS84LT1

Power MOSFET 130 mAmps, 50 Volts

Willas Electronic Corp. 

WILLAS

1.0PAoSUwRFeArCEMMOOUSNFT SECTHOT1T3K0Y BmARARmIERpRsE,CT5IF0IERVSo-2l0tVs- 200V

SOD-123+ PACKAGE

FM120-M+

BSS84LTT1HRU

FM1200-M+

Pb Free Product

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

optimize board space.

P•–LCowhpoawnernloessl, ShigOh eTff–ici2en3cy.

• High current capability, low forward voltage drop.

•THhieghsesurmgeinciaaptuarbeilitys.urface mount MOSFETs reduce power loss

co•nGsuearrvderinegnfeorrgoyv,ermvoaltkaignegptrhotisecdtioenv.ice ideal for use in small power

0.146(3.7)

0.130(3.3)

m•aUnlatrgaehmigehn-stpceiercdusiwtryit.chTiynpgi.cal applications are dc–dc converters, load

sw• iStcilhicionnge, ppitaoxwiaelrplamnaarncahgipe,mmeentatl sinilicopnojrutanbctlieon.and battery–powered

pr•oLdeuacdt-sfrseuecpharatssmceoemt epnuvtierorsn,mpernintatel srsta,ncdealrludlsaorfand cordless telephones.

•• ERMnoIHLe-SrSgpTyrDoEd-1fufc9ict5if0eo0rnp/t2ac2k8ing code suffix "G"

• MHainloiagetunrfereeSpOroTd–u2ct3foSr uparfcakicneg cModoeusnutffPixa"Hck" age Saves Board Space

• MPeb-cFhreaenpiaccaklagdeaitsaavailable

• REpooHxSy :pUrLo9d4u-cVt0forartepdafclakminegrceotadrdeasnut ffix ”G”

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

• HCaasloeg:eMnolfdreeed pplraosdticu,cSt OfoDr-1p2a3cHking code suffix “H”

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

SOT –230.031(0.8) Typ.

Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

•

Weight

:

Approximated

3 Drain

0.011 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RSiantginlegsphaat s2e5℃halfawmabvieen, t6t0e1Hmzp,ererastiusrtieveunolfeisnsd-uocthtievrewliosaeds.pecified.

For capacitive load, derateGcautrerent by 20%

RATINGS

Marking Code

2

Maximum Recurrent Peak Reverse Voltage Source

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT

12

13

14

15

16 Ma1r8king D1i0agram 115 120

VRRM

20

30

40

50

60

80

100

150

200 Volts

Maximum RMS Voltage

VRMS

14

21

28

35

42

56

70

105

140 Volts

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

VDC

20

30

IO

40

50

60

1.0

80

100

PD

150

200 Volts

Amps

Peak

MAXIMUM

Forward Surge

RCuArrTeInNt 8G.3Sm(sTsJin=gl2e5h°aClf

suinnele-wssavoetherIwFSisMe

noted)

superimposed on rated Rloaadtin(JgEDEC method)

Symbol Value Unit

Typical Thermal Resistance (Note 2)

Typical JDunractiino–ntoC–aSpoaucirtcaencVeo(lNtaogtee 1)

RΘJA

CVJDSS

50

Vdc

OperatingGTaetem–ptoe–raStuoruercReaVngoeltage – Continuous

TVJ GS

± 20-55 to +V1d2c 5

30

40 PD = Device Code

120 M =-M55otnot+h1C50ode

Amps

℃/W

PF

℃

Storage TDermaipneCrauturrreenRt ange

TSTG

mA

- 65 to +175

℃

– Continuous @ TA = 25°C

– PulseCdHDArRaiAnCCTuErRreISntT(ICtpS≤ 10 µs)

MaximumToFtoarlwPaordwVerolDtaisgseipaat t1io.0nA@DCTA = 25°C

MaximumOApveeraratignegRaenvderSsteorCaugrereTnet matpe@raTtuAr=e25℃

Rated DC BRloacnkgineg Voltage

@T A=125℃

ID

130

SYMIBDOML

VFPD

TIJR, Tstg

FM120-5M2H0FM130-MH FM140-MH

225

m0W.50

– 55 to °C

150

FM150-M0H.7F0M160-OMHRFDME18R0-IMN0HG.8F5MIN11F0O0-MRHMFAMT101I.O590N-MH

FM1200-MH

0.92

Dev0i.c5e

Package

Shipping

BSS8140LT1 SOT-23 3000/Tape&Reel

UNIT

Volts

mAmps

NOTES: Thermal Resistance – Junction–to–Ambient RθJA

1- MeasurMedaaxtim1 uMmHZLeanaddaTpepmliepderreavteurrsee fvoorltSagoeldoefr4in.0gVDC. TL

2- Thermal RPeusirsptaonsceesF, rfoomr 1J0unsceticoonntodsAmbient

556 °C/W

260

°C

2012-06

2012-10

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

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