BSP603S2L Просмотр технического описания (PDF) - Infineon Technologies
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BSP603S2L Datasheet PDF : 8 Pages
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BSP603S2L
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS≥2*ID*RDS(on)max, 8.9 17.8
-S
ID=5.2
VGS=0V, VDS=25V,
f=1MHz
- 1034 1390 pF
- 244 325
-
75 110
VDD=30V, VGS=4.5V,
-
10.8 16 ns
ID=5.2A,
RG=5.6Ω
VDD=30V, VGS=4.5V,
-
ID=5.2mA,
-
RG=5.6Ω
-
16 24
28 40
15 23
Qgs
Qgd
VDD=44V, ID=5.2A
Qg
VDD=44V, ID=5.2A,
VGS=0 to 10V
V(plateau) VDD=44V, ID=5.2A
- 3.5 4.6 nC
- 10.6 16
-
31 42
-
3
-V
IS
ISM
VSD
trr
Qrr
TA=25°C
VGS=0V, IF=5.2A
VR=30V, IF=lS,
diF/dt=100A/µs
-
- 5.2 A
-
-
21
- 0.8 1.1 V
- 46 58 ns
- 44 55 nC
Page 3
2003-10-29
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