Q67000-S301 Просмотр технического описания (PDF) - Infineon Technologies
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производитель
Q67000-S301 Datasheet PDF : 8 Pages
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BSP 373
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 1.7 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
0.75
4.6
Ω
V
98%
0.65
4.0
RDS
0.60
(on)
0.55
0.50
VGS(th) 3.6
3.2
typ
0.45
2.8
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60
-20
98%
typ
20
60
100 ˚C 160
Tj
2.4
2%
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 1
nF
C
10 0
A
I
F
10 0
Ciss
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
V
DS
Data Sheet
7
10 -1
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99
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