Q67000-S301 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

Q67000-S301

SIPMOS ® Small-Signal Transistor

Infineon Technologies 

BSP 373

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air

Thermal resistance, junction-soldering point 1)

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

R thJS

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Values

Unit

-55 ... + 150 ˚C

-55 ... + 150

≤ 70

K/W

≤ 10

E

55 / 150 / 56

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C

Gate threshold voltage

VGS=VDS, ID = 1 mA

Zero gate voltage drain current

VDS = 100 V, VGS = 0 V, Tj = 25 ˚C

VDS = 100 V, VGS = 0 V, Tj = 125 ˚C

Gate-source leakage current

VGS = 20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = 10 V, ID = 1.7 A

V(BR)DSS

V

100

-

-

VGS(th)

2.1

3

4

IDSS

-

µA

0.1

1

-

10

100

IGSS

-

nA

10

100

RDS(on)

-

Ω

0.16

0.3

Data Sheet

2

05.99

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