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Номер в каталоге
Компоненты Описание
BSP322P(2009) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
BSP322P
(Rev.:2009)
SIPMOS® Small-Signal-Transistor
Infineon Technologies
BSP322P Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
1 Power dissipation
P
tot
=f(
T
C
)
2 Drain current
I
D
=f(
T
C
); |
V
GS
|
≥
10 V
BSP322P
2
1.2
1
1.5
0.8
1
0.6
0.4
0.5
0.2
0
0
40
80
120
160
T
A
[°C]
0
0
40
80
120
160
T
A
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
1
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
2
100 µs
0.5
10
0
10
-1
1 ms
10 ms
100 ms
0.2
10
1
0.1
0.05
0.02
10
0
0.01
10
-2
10
0
Rev 1.03
DC
10
1
10
2
-V
DS
[V]
single pulse
10
-1
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
p
[s]
page 4
2009-02-17
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