BSH299 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

BSH299

P-channel enhancement mode MOS transistor

Philips Electronics 

Philips Semiconductors

P-channel enhancement mode MOS transistor

Objective specification

BSH299

handbook, halfpage

VDD = −40 V

0V

−10 V

50 Ω

ID

MLD189

handbook, halfpage

INPUT

10 %

90 %

OUTPUT

90 %

ton

10 %

toff

MBB690

Fig.5 Switching time test circuit.

Fig.6 Input and output waveforms.

handbook,8h0alfpage

C

(pF)

60

MLD191

40

Ciss

20

Coss

Crss

0

0

−10

−20 VDS (V) −30

VGS = 0; Tj = 25 °C; f = 1 MHz.

Fig.7 Capacitance as a function of

drain-source voltage; typical values.

1998 Feb 18

−600

handbook, halfpage

ID

VGS = −10 V −7.5 V

(mA)

−400

−6 V

MLD197

−5 V

−200

−4 V

−3 V

−2.5 V

0

0

−2

−4

−6

−8 −10 −12

VDS (V)

Tj = 25 °C.

Fig.8 Output characteristics; typical values.

6

Share Link: