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Компоненты Описание
BS616LV8018FIG70 Просмотр технического описания (PDF) - Brilliance Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BS616LV8018FIG70
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Brilliance Semiconductor
BS616LV8018FIG70 Datasheet PDF : 8 Pages
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2
3
4
5
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7
8
BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
t
RC
ADDRESS
t
OH
t
AA
D
OUT
READ CYCLE2
(1,3,4)
CE2
CE1
D
OUT
t
ACS2
t
ACS1
(5)
t
CLZ
READ CYCLE3
(1,4)
ADDRESS
OE
CE2
CE1
LB,UB
t
RC
t
AA
t
OE
t
ACS2
t
OLZ
t
ACS1
(5)
t
CLZ
t
BE
t
BA
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2 = V
IH.
3. Address valid prior to or coincident with CE transition low.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
R0201-BS616LV8018
5
BS616LV8018
t
OH
t
(5)
CHZ
t
OH
t
(5)
OHZ
t
(1,5)
CHZ
t
BDO
Revision 2.1
Jan. 2004
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