BLW98 Просмотр технического описания (PDF) - Philips Electronics
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BLW98 Datasheet PDF : 13 Pages
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Philips Semiconductors
UHF linear power transistor
Product specification
BLW98
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
open base
Emitter-base voltage (open collector)
Collector current
VCESM
VCEO
VEBO
d.c.
IC
(peak value); f > 1 MHz
ICM
Total power dissipation at Th = 70 °C
Ptot
Storage temperature
Tstg
Operating junction temperature
Tj
max.
max.
max.
50 V
27 V
3,5 V
max.
2A
max.
4A
max. 21,5 W
−65 to +150 °C
max. 200 °C
10
handbook, halfpage
IC
(A)
1
MGP717
(1)
Th = 70 °C Tmb = 25 °C
40
handbook, halfpage
Ptot
(W)
30
20
MGP718
10−1
1
10
VCE (V)
102
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 21,25 W; Tmb = 82,75 °C, Th = 70 °C)
From junction to mounting base
From mounting base to heatsink
10
0
50
Th (°C)
100
Fig.3 Power derating curve vs. temperature.
Rth j-mb
=
Rth mb-h
=
5,45 K/W
0,6 K/W
August 1986
3
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