BLW83 Просмотр технического описания (PDF) - Philips Electronics
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BLW83 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW83
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 28 V; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
Gp
ηdt (%)
IC (A)
d3
d5
IC(ZS)
Th
dB
at 30 W P.E.P.
dB(1)
dB(1)
mA
°C
3 to 30 (P.E.P.)
typ. 21
typ. 40
typ. 1,34 typ. −30
< −30
25
25
3 to 25 (P.E.P.)
typ. 21
−
−
typ. −30
< −30
25
70
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
50 Ω
C1
L1
R1
C2
R2
temperature
compensated bias
C3
T.U.T.
L3
L2
L4 C7
C4
50 Ω
C8
+VCC
C5
C6
MGP594
Fig.10 Test circuit; s.s.b. class-AB.
List of components:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 56 pF ceramic capacitor (500 V)
C7 = C8 = 15 to 575 pF film dielectric trimmer
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm
R1 = 1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors
R2 = 39 Ω carbon resistor
August 1986
8
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