BLW81 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BLW81

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

Collector-emitter voltage (open base)

Emitter-base voltage (open collector)

Collector current (d.c. or average)

Collector current (peak value); f > 1 MHz

R.F. power dissipation (f > 1 MHz); Tmb = 25 °C

Storage temperature

Operating junction temperature

VCESM

VCEO

VEBO

IC

ICM

Ptot

Tstg

Tj

Product specification

BLW81

max

36 V

max

17 V

max

4V

max 2,5 A

max 7,5 A

max

40 W

−65 to +150 °C

max 200 °C

handbook,1h0alfpage

IC

(A)

MGP573

Tmb = 25 °C

Th = 70 °C

1

1

10

VCE (V)

102

handbook,5h0alfpage

Prf

(W)

MGP574

r.f. power dissipation

VCE ≤ 16.5 V

f > 1 MHz

40

short time operation

during

mismatch

30

derate by

0.204 W/K

continuous operation

20

10

0

0

50

Th (°C)

100

Fig.2

THERMAL RESISTANCE

From junction to mounting base

From mounting base to heatsink

Fig.3

Rth j-mb

Rth mb-h

=

4,3 K/W

=

0,6 K/W

March 1993

3

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