BLW32 Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
BLW32 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF linear power transistor
Product specification
BLW32
APPLICATION INFORMATION
fvision (MHz)
860
860
860
VCE (V)
25
25
25
IC (mA)
150
150
150
Th (°C)
70
70
25
dim(dB) (1)
−60
−60
−60
Po sync (W) (1)
>
0,5
typ. 0,58
typ. 0,63
Gp (dB)
> 11
typ. 12,2
typ. 12,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
handbook, full pagewidth
L1
C1
L2
C3
L3
50 Ω
T.U.T.
L6
C7
L7
50 Ω
C2
L4
C4 C5
L5
C6
C8
C9 C10 C11
C12 C13 C14 C15
+VBB
+VCC
Fig.8 Test circuit at fvision = 860 MHz.
MGP435
List of components:
C1 = C7 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003)
C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 17 mm
and 45 mm respectively from transistor edge
C3 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002)
C4 = C5 = 3 pF multilayer chip capacitor (ATC 100A-3RO-C-PX-50)
C9 = C12 = 1 nF chip capacitor
C10 = 100 nF polyester capacitor
C11 = C13 = 470 nF polyester capacitor
C14 = 10 nF polyester capacitor
C15 = 3,3 µF/40 V solid aluminium electrolytic capacitor
L1 = stripline (5,0 mm × 4,5 mm)
L2 = stripline (13,2 mm × 4,5 mm)
L3 = stripline (15,0 mm × 4,5 mm)
L4 = micro choke 0,47 µH (cat. no. 4322 057 04770)
L5 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 × 4 mm
L6 = stripline (37,0 mm × 4,5 mm)
L7 = stripline (13,5 mm × 4,5 mm)
August 1986
7
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