BLW32 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BLW32

UHF linear power transistor

Philips Electronics 

Philips Semiconductors

UHF linear power transistor

Product specification

BLW32

20

handbook, full pagewidth

Rth j-h

(K/W)

15

Th = 125 °C

100 °C

75 °C

50 °C

MGP431

25 °C

0 °C

125 °C

150 °C

175 °C

Tj = 200 °C

75 °C

100 °C

10

0

5

10

Ptot (W)

15

Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink

and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)

Example

Nominal class-A operation: VCE = 25 V; IC = 150 mA; Th = 70 °C.

Fig.4 shows:

Typical device:

Rth j-h

Tj

Rth j-h

Tj

max.

max.

typ.

typ.

15,6 K/W

130 °C

13,5 K/W

120 °C

August 1986

4

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