BLW32 Просмотр технического описания (PDF) - Philips Electronics
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BLW32 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF linear power transistor
Product specification
BLW32
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); VBE = 0
open base
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f > 1 MHz
Total power dissipation up to Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
max.
max.
max.
50 V
30 V
4V
max. 650 mA
max. 1000 mA
max. 10,8 W
−65 to +150 °C
max. 200 °C
1
handbook, halfpage
IC
(A)
MGP429
Th = 70 °C
Tmb = 25 °C
(1)
15
handbook, halfpage
Ptot
(W)
10
MGP430
5
10−1
1
10
VCE (V)
102
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
THERMAL RESISTANCE (see Fig.4)
From junction to mounting base
(dissipation = 3,75 W; Tmb = 72,3 °C; i.e. Th = 70 °C)
From mounting base to heatsink
0
0
50
Th (°C)
100
Fig.3 Power derating curve vs. temperature.
Rth j-mb
=
Rth mb-h
=
15,0 K/W
0,6 K/W
August 1986
3
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