BLW32 Просмотр технического описания (PDF) - Philips Electronics
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BLW32 Datasheet PDF : 12 Pages
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Philips Semiconductors
UHF linear power transistor
Product specification
BLW32
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
linear u.h.f. amplifiers for television
transmitters and transposers. The
excellent d.c. dissipation
properties for class-A operation are
obtained by means of diffused emitter
ballasting resistors and a multi-base
structure, providing an optimum
temperature profile on the crystal
area. The combination of optimum
thermal design and the application of
gold sandwich metallization
realizes excellent reliability
properties.
The transistor has a 1⁄4" capstan
envelope with ceramic cap.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
class-A; linear amplifier
fvision
MHz
860
860
VCE
IC
Th
dim (1) Po sync (1)
Gp
V
mA
°C
dB
W
dB
25
150
70 −60 >
0,5 > 11
25
150
25 −60 typ. 0,63 typ. 12,2
Note
1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to
peak sync level.
PIN CONFIGURATION
handbook, halfpage
4
1
3
PINNING - SOT122A.
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
2
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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