BLW29 Просмотр технического описания (PDF) - Philips Electronics

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BLW29

VHF power transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

Product specification

BLW29

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B or C operated mobile transmitters

with a nominal supply voltage of

13,5 V. Because of the high gain and

excellent power handling capability,

the transistor is especially suited for

design of wide-band and

semi-wide-band v.h.f. amplifiers.

Together with a BFQ42 driver stage,

the chain can deliver 15 W with a

maximum drive power of 120 mW at

175 MHz. The transistor is resistance

stabilized and is guaranteed to

withstand severe load mismatch

conditions with a supply over-voltage

to 16,5 V.

It has a 3/8" capstan envelope with a

ceramic cap. All leads are isolated

from the stud.

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF OPERATION VCE

V

c.w. class-B

13,5

c.w. class-B

12,5

f

MHz

175

175

PIN CONFIGURATION

halfpage

4

1

3

handbook, halfpage

2

MSB056

PL

Gp

η

W

dB

%

15

> 10

> 60

15

typ. 10, 5 typ. 67

zi

Ω

1,3 + j0,68

−

YL

mS

180 − j54

−

c

b

MBB012

e

PINNING - SOT120

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

Fig.1 Simplified outline and symbol.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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