BLV910 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BLV910

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCEO

VEBO

IC

IC(AV)

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

average collector current

total power dissipation

storage temperature

operating junction temperature

open emitter

open base

open collector

up to Tmb = 25 °C

THERMAL CHARACTERISTICS

SYMBOL

Rth j-mb

Rth mb-h

PARAMETER

thermal resistance from junction to

mounting base

thermal resistance from mounting

base to heatsink

CONDITIONS

Ptot = 30 W; Tmb = 25 °C

Product specification

BLV910

MIN.

−

−

−

−

−

−

−65

−

MAX.

70

30

3

1.5

1.5

30

+150

200

UNIT

V

V

V

A

A

W

°C

°C

VALUE

5.85

UNIT

K/W

0.4

K/W

handbook, 1ha0lfpage

IC

(A)

1

MLC658

(1)

(2)

10 1

1

10

10 2

VCE (V)

(1) Tmb = 25 °C.

(2) Th = 70 °C.

Fig.2 DC SOAR.

handbook, h4a0lfpage

Ptot

(W)

30

20

MLC659

(2)

(1)

10

0

0 20 40 60 80 100 120 140

Th (oC)

(1) Continuous operation.

(2) Short-time operation during mismatch.

Fig.3 Power derating curves.

1995 Apr 11

3

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