BLV193 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BLV193

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICES

hFE

Cc

Cre

Cc-mb

PARAMETER

CONDITIONS

collector-base breakdown voltage

collector-emitter breakdown voltage

emitter-base breakdown voltage

collector-emitter leakage current

DC current gain

open emitter;

Ic = 20 mA

open base;

Ic = 40 mA

open collector;

IE = 0.5 mA

VCE = 16 V;

VBE = 0

VCE = 10 V;

Ic = 1.2 A;

note 1

collector capacitance

VCB = 12.5 V;

IE = Ie = 0;

f = 1 MHz

feedback capacitance

VCE = 12.5 V;

Ic = 0;

f = 1 MHz

collector-mounting base capacitance

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0.02.

Product specification

BLV193

MIN. TYP. MAX. UNIT

36 −

−

V

16 −

−

V

3

−

−

V

−

−

1

mA

25 60 −

−

24.5 −

pF

−

13 −

pF

−

2

−

pF

March 1993

4

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