BLF878 Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
7.2.2 DVB-T
22
Gp
(dB)
Gp
18
ηD
001aai083
60
(2)
ηD
(1)
(%)
(1)
40
(2)
14
20
0
IMD3
(dBc)
−20
−40
BLF878
UHF power LDMOS transistor
001aai084
(1)
(2)
10
0
400
500
600
700
800
900
f (MHz)
−60
400
500
600
700
800
900
f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 9. DVB-T power gain and drain efficiency as
functions of frequency; typical values
PL(AV) = 77 W; IDq = 1.4 A; measured in a common
source broadband test circuit as described in Section 8.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 10. DVB-T third order intermodulation distortion
as a function of frequency; typical values
10
PAR
(dB)
9
8
001aai085
(2)
(1)
7
6
5
400
500
600
700
800
900
f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8.
PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
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