BLF878 Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF878 Datasheet PDF : 18 Pages
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NXP Semiconductors
7.1.2 2-Tone
22
Gp
Gp
(dB)
20
ηD
(1)
(2)
(2)
(1)
001aai077
60
ηD
(%)
40
18
20
−10
IMD3
(dBc)
−20
−30
−40
BLF878
UHF power LDMOS transistor
001aai078
(1)
(2)
16
0
0
100
200
300
400
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 3.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
−50
0
100
200
300
400
PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband
860 MHz test circuit.
(1) VDS = 40 V
(2) VDS = 42 V
Fig 4.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
BLF878_2
Product data sheet
Rev. 02 — 15 June 2009
© NXP B.V. 2009. All rights reserved.
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