BLF878 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BLF878

UHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF878

UHF power LDMOS transistor

350

Coss

(pF)

250

001aai075

150

50

0

20

40

60

VDS (V)

Fig 1.

VGS = 0 V; f = 1 MHz.

Output capacitance as a function of drain-source voltage; typical values per

section; capacitance value without internal matching

7. Application information

Table 7. RF performance in a common-source narrowband 860 MHz test circuit

Tcase = 25 °C unless otherwise specified.

Mode of operation f

VDS IDq PL(PEP) PL(AV) Gp ηD IMD3

(MHz)

(V) (A) (W)

(W) (dB) (%) (dBc)

2-Tone, class AB

f1 = 860; f2 = 860.1 40 1.4[1] 300

-

> 18 > 42 < −31

DVB-T (8k OFDM) 858

40 1.4[1] -

75

> 18 > 29 < −29 [2]

[1] IDq = 1.4 A for total device.

[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.

BLF878_2

Product data sheet

Rev. 02 — 15 June 2009

© NXP B.V. 2009. All rights reserved.

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