BLF878 Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BLF878

UHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF878

UHF power LDMOS transistor

Table 8. Typical push-pull impedance …continued

Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W.

f

Zi

ZL

MHz

Ω

Ω

925

5.103 + j4.467

3.706 − j0.871

950

5.656 + j4.291

3.556 − j1.011

975

6.205 + j3.963

3.415 − j1.157

1000

6.696 + j3.463

3.281 − j1.308

7.5 Reliability

106

Years

105

001aai087

104

(1)

(2)

(3)

103

(4)

(5)

(6)

102

(7)

(8)

(9)

(10)

10

(11)

1

0

4

8

12

16

20

24

IDS(DC) (A)

TTF (0.1 % failure fraction).

The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.

(1) Tj = 100 °C

(2) Tj = 110 °C

(3) Tj = 120 °C

(4) Tj = 130 °C

(5) Tj = 140 °C

(6) Tj = 150 °C

(7) Tj = 160 °C

(8) Tj = 170 °C

(9) Tj = 180 °C

(10) Tj = 190 °C

(11) Tj = 200 °C

Fig 13. BLF878 electromigration (IDS(DC), total device)

BLF878_2

Product data sheet

Rev. 02 — 15 June 2009

© NXP B.V. 2009. All rights reserved.

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