BLF861A Просмотр технического описания (PDF) - Philips Electronics

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производитель

BLF861A

UHF power LDMOS transistor

Philips Electronics 

Philips Semiconductors

Product specification

UHF power LDMOS transistor

BLF861A

THERMAL CHARACTERISTICS

SYMBOL

Rth j-mb

Rth mb-h

PARAMETER

CONDITIONS

thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 318 W

thermal resistance from mounting base to heatsink

VALUE

0.55

0.2

UNIT

K/W

K/W

CHARACTERISTICS

Tj = 25 °C; per section; unless otherwise specified.

SYMBOL

V(BR)DSS

VGSth

IDSS

IDSX

IGSS

gfs

RDSon

Ciss

Coss

Crss

PARAMETER

drain-source breakdown voltage

gate-source threshold voltage

drain-source leakage current

drain cut-off current

gate leakage current

forward transconductance

drain-source on-state resistance

input capacitance

output capacitance

feedback capacitance

CONDITIONS

MIN.

VGS = 0; ID = 1.5 mA

65

VDS = 10 V; ID = 150 mA

4

VGS = 0; VDS = 32 V

−

VGS = VGSth + 9 V; VDS = 10 V

18

VGS = ±15 V; VDS = 0

−

VDS = 10 V; ID = 4 A

−

VGS = VGSth + 9 V; ID = 4 A

−

VGS = 0; VDS = 32 V; f = 1 MHz (1) −

VGS = 0; VDS = 32 V; f = 1 MHz (1) −

VGS = 0; VDS = 32 V; f = 1 MHz (1) −

TYP.

−

−

−

−

−

4

160

82

40

6

MAX. UNIT

−

V

5.5 V

2.2 µA

−

A

25

nA

−

S

−

mΩ

−

pF

−

pF

−

pF

Note

1. Capacitance values without internal matching.

100

handbook, halfpage

Coss

(pF)

80

MLD510

60

40

20

0

0

10

20

30

40

50

VDS (V)

VGS = 0; f = 1 MHz; Tj = 25 °C.

Fig.2 Output capacitance as a function of

drain-source voltage; typical values per

section.

2001 Feb 09

3

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