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BLF861A

UHF power LDMOS transistor

Philips Electronics 

Philips Semiconductors

UHF power LDMOS transistor

Product specification

BLF861A

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Designed to withstand abrupt load mismatch errors

• Source on underside eliminates DC isolators; reducing

common mode inductance

• Designed for broadband operation (UHF band)

• Internal input and output matching for high gain and

optimum broadband operation.

APPLICATIONS

• Communication transmitter applications in the UHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement mode lateral D-MOS

push-pull transistor in a SOT540A package with ceramic

cap. The common source is connected to the mounting

flange.

PINNING - SOT540A

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source connected to flange

1

2

3

Top view

5

4

MBK777

Fig.1 Simplified outline.

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source 860 MHz test circuit.

MODE OF OPERATION

f

(MHz)

VDS

(V)

PL

(W)

Gp

(dB)

ηD

(%)

CW, class-AB

PAL BG (TV); class-AB

860

32

150

>13.5

>50

typ. 14.5

860 (ch 69)

32

>150

>14

>40

typ. 170

(peak sync)

Note

1. Sync compression: input sync ≥ 33%; output sync 27%.

∆Gp

(dB)

≤1

note 1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VDS

VGS

ID

Ptot

Tstg

Tj

PARAMETER

drain-source voltage

gate-source voltage

drain current (DC)

total power dissipation

storage temperature

junction temperature

CONDITIONS

Tmb ≤ 25 °C

MIN.

−

−

−

−

−65

−

MAX.

65

±15

18

318

+150

200

UNIT

V

V

A

W

°C

°C

2001 Feb 09

2

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